Inventors: Fisher; Brent et al.AbstractA light emitting diode (LED) includes a semiconductor structure comprising at least one epitaxial layer that is configured to generate far-UVC light, and respective electrical contacts on first and second surfaces of the semiconductor structure. One or more dimensions of the at least one epitaxial layer in a lateral direction are within…
US Patent Application – US 20250205379 A1 “MICRO-LEDS CONFIGURED FOR OPERATION AT WAVELENGTHS IN THE FAR-UVC SPECTRUM”
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