See http://tny.im/rVz — Crack-free and parasitic-free Al-polar aluminum nitride (AlN) single crystals up to Φ56 mm were iteratively grown by the homoepitaxial physical vapor transport method. The detailed iterative growth processes from the spontaneous AlN boules to Φ56 mm single crystals were presented. Our growth experiments revealed that stable growth of large Al-polar crystals with…
Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method
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