See http://tny.im/sbJ — It is generally known that Zn volatilization would result in a serious degradation in film quality and device performance during a non-stoichiometric ZnGa2O4 target ablation. This work highlights the effect of various substrate temperatures and partial oxygen pressures on the microstructural and optoelectronic properties of stoichiometric ZnGa2O4 films. First-principle studies have been…
Pulsed laser deposition grown non-stoichiometry transferred ZnGa2O4 films for deep-ultraviolet applications
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